FGL12040WD
IGBT TRENCH/FS 1200V 80A TO264-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGL12040WD is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a maximum collector-emitter breakdown voltage of 1200 V and can handle a continuous collector current of 80 A, with a pulsed current capability of 100 A (Icm). The device offers a low on-state voltage (Vce(on)) of 2.9V at 15V gate-emitter voltage and 40A collector current. Key switching characteristics include a turn-on delay (Td(on)) of 45ns and a turn-off delay (Td(off)) of 560ns at 25°C, with a reverse recovery time (trr) of 71ns. The high power dissipation rating of 391 W and a gate charge of 226 nC are notable parameters. The FGL12040WD is packaged in a TO-264-3 (TO-264AA) through-hole style, suitable for demanding industrial power switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 71 ns |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 40A |
| Supplier Device Package | TO-264-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 45ns/560ns |
| Switching Energy | 4.1mJ (on), 1mJ (off) |
| Test Condition | 600V, 40A, 23Ohm, 15V |
| Gate Charge | 226 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 391 W |
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