onsemi FGHL40S65UQ is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) with a maximum collector-emitter voltage of 650 V. This through-hole component, housed in a TO-247-3 package, offers a continuous collector current of 80 A and a pulsed collector current of 120 A. The device features a low on-state voltage (Vce(on)) of 1.7 V at 15 V gate-emitter voltage and 40 A collector current. Switching characteristics include a typical turn-on delay (Td(on)) of 32 ns and a turn-off delay (Td(off)) of 260 ns at 25°C, with switching energies of 1.76 mJ (on) and 362 µJ (off) under test conditions of 400 V, 40 A, 6 Ohm, and 15 V. Its maximum power dissipation is 231 W, and it operates across a junction temperature range of -55°C to 175°C. This IGBT is suitable for applications in power switching and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 319 ns |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 32ns/260ns |
| Switching Energy | 1.76mJ (on), 362µJ (off) |
| Test Condition | 400V, 40A, 6Ohm, 15V |
| Gate Charge | 306 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 231 W |
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