FGH80N60FDTU
IGBT 600V 80A 290W TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH80N60FDTU is a 600V, 80A Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a collector current of 80A continuous and 160A pulsed, with a maximum power dissipation of 290W. The FGH80N60FDTU exhibits low on-state voltage (Vce(on)) of 2.4V at 15V gate-emitter voltage and 40A collector current. Key switching characteristics include a typical turn-on delay (Td(on)) of 21ns and turn-off delay (Td(off)) of 126ns at 25°C, with a reverse recovery time (trr) of 36ns. The device boasts a low switching energy of 1mJ (on) and 520µJ (off). Packaged in a TO-247-3 through-hole configuration, the FGH80N60FDTU is suitable for demanding applications in industrial power supplies, motor control, and welding equipment. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 36 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 21ns/126ns |
| Switching Energy | 1mJ (on), 520µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 290 W |
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