FGH80N60FD2TU
IGBT FIELD STOP 600V 80A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH80N60FD2TU is a 600V, 80A Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device features a maximum collector current of 80A and a pulsed collector current of 160A, with a low collector-emitter saturation voltage (Vce(on)) of 2.4V at 15V gate-emitter voltage and 40A collector current. Key performance parameters include a gate charge of 120 nC and switching times of 21ns turn-on and 126ns turn-off at 25°C. The IGBT exhibits a maximum power dissipation of 290W and a reverse recovery time (trr) of 61ns. Packaged in a TO-247-3 through-hole configuration, the FGH80N60FD2TU operates across a temperature range of -55°C to 150°C. This component is suitable for use in power factor correction, motor drives, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 61 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 21ns/126ns |
| Switching Energy | 1mJ (on), 520µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 290 W |
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