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FGH75T65UPD-F085

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FGH75T65UPD-F085

IGBT 650V 150A 375W TO-247AB

Manufacturer: onsemi

Categories: Single IGBTs

Quality Control: Learn More

The onsemi FGH75T65UPD-F085 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. This device offers a 650V collector-emitter breakdown voltage and a continuous collector current rating of 150A, with a pulsed capability of 225A. The IGBT type utilizes Trench Field Stop technology for enhanced switching efficiency and reduced conduction losses, achieving a maximum on-state voltage of 2.3V at 75A. With a maximum power dissipation of 375W and a junction temperature range of -55°C to 175°C, it is suitable for demanding environments. The TO-247-3 package facilitates through-hole mounting. Key switching parameters include a typical on-time of 32ns and off-time of 166ns at 25°C, with switching energies of 2.85mJ (on) and 1.2mJ (off) under specified test conditions. Its AEC-Q101 qualification indicates suitability for automotive applications, including electric vehicle powertrains and industrial motor control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)85 ns
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 75A
Supplier Device PackageTO-247-3
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C32ns/166ns
Switching Energy2.85mJ (on), 1.2mJ (off)
Test Condition400V, 75A, 3Ohm, 15V
Gate Charge578 nC
GradeAutomotive
Current - Collector (Ic) (Max)150 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)225 A
Power - Max375 W
QualificationAEC-Q101

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