FGH75T65SHDTLN4
FS3 T TO247 75A 650V 4WLManufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH75T65SHDTLN4 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component offers a 650 V collector-emitter breakdown voltage and a continuous collector current of 150 A, with a pulsed current capability of 300 A. Featuring a maximum power dissipation of 455 W and a low on-state voltage of 2.1 V at 15 V gate-emitter voltage and 75 A collector current, the FGH75T65SHDTLN4 ensures efficient power transfer. The device exhibits a gate charge of 126 nC and switching energies of 1.06 mJ (turn-on) and 1.56 mJ (turn-off) under specified test conditions (400 V, 75 A, 15 Ohm, 15 V). Its robust design includes a TO-247-4 package for through-hole mounting and operation across a wide temperature range of -55°C to 175°C. This IGBT is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 36 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
| Supplier Device Package | TO-247-4 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 55ns/189ns |
| Switching Energy | 1.06mJ (on), 1.56mJ (off) |
| Test Condition | 400V, 75A, 15Ohm, 15V |
| Gate Charge | 126 nC |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 455 W |
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