FGH75N60UFTU
IGBT 600V 150A 452W TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH75N60UFTU is a Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 150 A, with a pulsed capability of 225 A. The maximum power dissipation is 452 W. Key performance parameters include a low on-state voltage of 2.4 V at 15 V gate-emitter voltage and 75 A collector current, and switching times of 27 ns turn-on and 128 ns turn-off at 400 V and 75 A. The gate charge is 250 nC. This IGBT is housed in a TO-247-3 package suitable for through-hole mounting and operates across a wide temperature range of -55°C to 150°C. It finds application in motor control, power supplies, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 75A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 27ns/128ns |
| Switching Energy | 3.05mJ (on), 1.35mJ (off) |
| Test Condition | 400V, 75A, 3Ohm, 15V |
| Gate Charge | 250 nC |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 225 A |
| Power - Max | 452 W |
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