FGH60N6S2
IGBT 600V 75A 625W TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH60N6S2 is a 600V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This device features a maximum continuous collector current (Ic) of 75A and a pulsed collector current (Icm) of 320A. With a maximum power dissipation of 625W and a collector-emitter saturation voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 40A collector current, the FGH60N6S2 offers efficient switching. Typical on-state and off-state switching energies are 400µJ and 310µJ, respectively, with specified turn-on and turn-off delays of 18ns and 70ns at 25°C. The IGBT is housed in a TO-247-3 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in power factor correction, motor control, and uninterruptible power supply (UPS) systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 18ns/70ns |
| Switching Energy | 400µJ (on), 310µJ (off) |
| Test Condition | 390V, 40A, 3Ohm, 15V |
| Gate Charge | 140 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 320 A |
| Power - Max | 625 W |
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