FGH60N60UFDTU-F085
IGBT 600V 120A 298W TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH60N60UFDTU-F085 is a 600V, 120A Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a maximum collector power dissipation of 298W and a collector current capability of 120A, with a pulsed current rating (Icm) of 180A. The FGH60N60UFDTU-F085 exhibits a low on-state voltage (Vce(on)) of 2.9V at 15V gate-source voltage and 60A collector current. Typical switching characteristics include a turn-on delay (Td(on)) of 29ns and a turn-off delay (Td(off)) of 138ns at 25°C, with a reverse recovery time (trr) of 76ns, tested under 400V, 60A, 5 Ohm, and 15V conditions. The gate charge is specified at 192 nC. This device is housed in a TO-247-3 package, suitable for through-hole mounting and operating across a temperature range of -55°C to 150°C. The FGH60N60UFDTU-F085 is AEC-Q101 qualified, indicating its suitability for automotive applications, including electric vehicle power conversion and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 76 ns |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 29ns/138ns |
| Switching Energy | 2.47mJ (on), 810µJ (off) |
| Test Condition | 400V, 60A, 5Ohm, 15V |
| Gate Charge | 192 nC |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 298 W |
| Qualification | AEC-Q101 |
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