FGH60N60UFDTU
IGBT FIELD STOP 600V 120A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH60N60UFDTU is a Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This component offers a collector-emitter breakdown voltage of 600 V and a continuous collector current capability of 120 A, with a pulsed current rating of 180 A. It features a low on-state voltage drop of 2.4 V at 15 V gate-emitter voltage and 60 A collector current. The device exhibits typical turn-on delay time of 23 ns and turn-off delay time of 130 ns at 25°C, with a switching energy of 1.81 mJ (on) and 810 µJ (off) under the specified test conditions (400V, 60A, 5 Ohm, 15V). With a maximum power dissipation of 298 W and an operating temperature range from -55°C to 150°C, the FGH60N60UFDTU is suitable for demanding applications in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits. The device is supplied in a TO-247-3 package for through-hole mounting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 47 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 60A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 23ns/130ns |
| Switching Energy | 1.81mJ (on), 810µJ (off) |
| Test Condition | 400V, 60A, 5Ohm, 15V |
| Gate Charge | 188 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 298 W |
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