FGH60N60SMD-F085
IGBT 600V 120A 600W TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH60N60SMD-F085 is a 600 V, 120 A Field Stop Insulated Gate Bipolar Transistor (IGBT) packaged in a TO-247-3 through-hole configuration. This device delivers a maximum continuous collector current of 120 A and a pulsed collector current of 180 A, with a maximum power dissipation of 600 W. Featuring a low on-state voltage of 2.5 V at 15 V gate-emitter voltage and 60 A collector current, it exhibits typical turn-on delay of 22 ns and turn-off delay of 116 ns at 25°C. The specified switching energy is 1.59 mJ for turn-on and 390 µJ for turn-off, with a reverse recovery time of 42 ns. With an operating junction temperature range of -55°C to 175°C and AEC-Q101 qualification, this IGBT is suitable for demanding applications in the automotive sector, including power management and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 42 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 60A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 22ns/116ns |
| Switching Energy | 1.59mJ (on), 390µJ (off) |
| Test Condition | 400V, 60A, 3Ohm, 15V |
| Gate Charge | 280 nC |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 600 W |
| Qualification | AEC-Q101 |
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