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FGH60N60SMD-F085

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FGH60N60SMD-F085

IGBT 600V 120A 600W TO247

Manufacturer: onsemi

Categories: Single IGBTs

Quality Control: Learn More

The onsemi FGH60N60SMD-F085 is a 600 V, 120 A Field Stop Insulated Gate Bipolar Transistor (IGBT) packaged in a TO-247-3 through-hole configuration. This device delivers a maximum continuous collector current of 120 A and a pulsed collector current of 180 A, with a maximum power dissipation of 600 W. Featuring a low on-state voltage of 2.5 V at 15 V gate-emitter voltage and 60 A collector current, it exhibits typical turn-on delay of 22 ns and turn-off delay of 116 ns at 25°C. The specified switching energy is 1.59 mJ for turn-on and 390 µJ for turn-off, with a reverse recovery time of 42 ns. With an operating junction temperature range of -55°C to 175°C and AEC-Q101 qualification, this IGBT is suitable for demanding applications in the automotive sector, including power management and motor control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)42 ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 60A
Supplier Device PackageTO-247-3
IGBT TypeField Stop
Td (on/off) @ 25°C22ns/116ns
Switching Energy1.59mJ (on), 390µJ (off)
Test Condition400V, 60A, 3Ohm, 15V
Gate Charge280 nC
GradeAutomotive
Current - Collector (Ic) (Max)120 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)180 A
Power - Max600 W
QualificationAEC-Q101

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