FGH60N60SFDTU-F085
IGBT FIELD STOP 600V 120A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH60N60SFDTU-F085 is a Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. This device features a collector-emitter voltage (Vce) of 600V and a continuous collector current (Ic) capability of 120A, with a pulsed collector current (Icm) of 180A. The IGBT exhibits a low on-state voltage (Vce(on)) of 2.9V at 15V gate-emitter voltage and 60A collector current. Switching characteristics include a gate charge of 188 nC, a turn-on delay (Td(on)) of 26ns, and a turn-off delay (Td(off)) of 134ns at 25°C. Switching energy is rated at 1.97mJ for turn-on and 570µJ for turn-off, with a reverse recovery time (trr) of 55ns. With a maximum power dissipation of 378W and an operating temperature range of -55°C to 150°C, this component is suitable for demanding environments. The FGH60N60SFDTU-F085 is packaged in a TO-247-3 through-hole configuration and is qualified to AEC-Q101, making it ideal for automotive and industrial power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 55 ns |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 26ns/134ns |
| Switching Energy | 1.97mJ (on), 570µJ (off) |
| Test Condition | 400V, 60A, 5Ohm, 15V |
| Gate Charge | 188 nC |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 378 W |
| Qualification | AEC-Q101 |
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