FGH60N60SFDTU
IGBT FIELD STOP 600V 120A TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH60N60SFDTU is a 600 V, 120 A Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This through-hole component, housed in a TO-247-3 package, offers a maximum continuous collector current (Ic) of 120 A and a pulsed collector current (Icm) of 180 A. It features a low on-state voltage (Vce(on)) of 2.9 V at 15 V gate-emitter voltage and 60 A collector current, with a maximum power dissipation of 378 W. The device exhibits excellent switching characteristics, with typical turn-on delay (Td(on)) of 22 ns and turn-off delay (Td(off)) of 134 ns at 25°C, and a reverse recovery time (trr) of 47 ns. The FGH60N60SFDTU is suitable for industrial applications such as motor drives, power supplies, and welding equipment. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 47 ns |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 22ns/134ns |
| Switching Energy | 1.79mJ (on), 670µJ (off) |
| Test Condition | 400V, 60A, 5Ohm, 15V |
| Gate Charge | 198 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 378 W |
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