FGH50T65UPD
IGBT TRENCH/FS 650V 100A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH50T65UPD is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This device offers a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 100 A, with a pulsed current capability of 150 A. Key electrical characteristics include a low Vce(on) of 2.3 V at 15 V gate-emitter voltage and 50 A collector current, and a gate charge of 230 nC. The FGH50T65UPD features optimized switching characteristics with specified turn-on and turn-off delays of 32 ns and 160 ns, respectively, at 25°C, and switching energies of 2.7 mJ (on) and 740 µJ (off). With a maximum power dissipation of 340 W and an operating temperature range of -55°C to 175°C, this component is housed in a TO-247-3 package suitable for through-hole mounting. It finds application in industries such as industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 53 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 50A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 32ns/160ns |
| Switching Energy | 2.7mJ (on), 740µJ (off) |
| Test Condition | 400V, 50A, 6Ohm, 15V |
| Gate Charge | 230 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 340 W |
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