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FGH40T70SHD-F155

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FGH40T70SHD-F155

650V FS GEN3 TRENCH IGBT

Manufacturer: onsemi

Categories: Single IGBTs

Quality Control: Learn More

The onsemi FGH40T70SHD-F155 is a 700V Trench Field Stop Insulated Gate Bipolar Transistor (IGBT). This device features a robust TO-247-3 package suitable for through-hole mounting. With a continuous collector current rating of 80A and a pulsed capability of 120A, it is designed for high-power applications. The on-state voltage (Vce(on)) is specified at a maximum of 2.15V at 15V gate-emitter voltage and 40A collector current. Key switching parameters include a gate charge of 69 nC, with turn-on delay (Td(on)) of 22ns and turn-off delay (Td(off)) of 66ns at 25°C. The switching energy is 1.15mJ for turn-on and 271µJ for turn-off, measured under test conditions of 400V, 40A, 6O load, and 15V gate drive. The FGH40T70SHD-F155 operates across a wide temperature range from -55°C to 175°C (TJ) and offers a maximum power dissipation of 268W. This component is utilized in power factor correction, uninterruptible power supplies (UPS), and industrial motor drives.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)37 ns
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 40A
Supplier Device PackageTO-247-3
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C22ns/66ns
Switching Energy1.15mJ (on), 271µJ (off)
Test Condition400V, 40A, 6Ohm, 15V
Gate Charge69 nC
Current - Collector (Ic) (Max)80 A
Voltage - Collector Emitter Breakdown (Max)700 V
Current - Collector Pulsed (Icm)120 A
Power - Max268 W

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