FGH40T65UQDF-F155
FS4TIGBT TO247 40A 650VManufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH40T65UQDF-F155 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current (Ic) rating of 80 A, with a pulsed collector current (Icm) of 120 A. The device dissipates a maximum power of 231 W and exhibits a low on-state voltage (Vce(on)) of 1.67 V at 15 V gate drive and 40 A collector current. Switching characteristics include typical turn-on delay (Td(on)) of 32 ns and turn-off delay (Td(off)) of 271 ns, with switching energies of 989 µJ (on) and 310 µJ (off) under test conditions of 400 V, 40 A, 6 Ohm, and 15 V. The gate charge is specified at 306 nC. This IGBT is available in a TO-247-3 package, suitable for through-hole mounting, and operates across an extended temperature range of -55°C to 175°C (TJ). It finds application in power conversion systems, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 89 ns |
| Vce(on) (Max) @ Vge, Ic | 1.67V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 32ns/271ns |
| Switching Energy | 989µJ (on), 310µJ (off) |
| Test Condition | 400V, 40A, 6Ohm, 15V |
| Gate Charge | 306 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 231 W |
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