FGH40T65UPD
IGBT TRENCH/FS 650V 80A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
Quality Control: Learn More
onsemi FGH40T65UPD is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. This component features a 650V collector-emitter breakdown voltage and a continuous collector current of 80A, with a pulsed capability of 120A. The Vce(on) is specified at a maximum of 2.3V at 15V gate-emitter voltage and 40A collector current. Gate charge is 177 nC, and switching energy is 1.59mJ for turn-on and 580µJ for turn-off, with typical turn-on delay of 20ns and turn-off delay of 144ns at 25°C.
The FGH40T65UPD is housed in a TO-247-3 package for through-hole mounting, offering a maximum power dissipation of 268W and an operating temperature range of -55°C to 175°C. Its robust design makes it suitable for use in power supply, motor drive, and industrial automation applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 43 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 20ns/144ns |
| Switching Energy | 1.59mJ (on), 580µJ (off) |
| Test Condition | 400V, 40A, 7Ohm, 15V |
| Gate Charge | 177 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 268 W |
Request a Quote
Clients Also Buy
ISL9V2040D3S
IGBT 430V 10A 130W TO252AA
FGY160T65SPD-F085
650V FS GEN3 TRENCH IGBT
NGD18N40CLBT4
IGBT 430V 15A DPAK
