FGH40T65SPD-F155
IGBT 650V 80A 267W TO-247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH40T65SPD-F155 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 80 A, with a pulsed capability of 120 A. The maximum power dissipation is 267 W. Key electrical characteristics include a Vce(on) of 2.4 V at 15 V gate-emitter voltage and 40 A collector current. Gate charge is specified at 35 nC, with typical turn-on delay (Td(on)) and turn-off delay (Td(off)) of 16 ns and 37 ns respectively at 25°C. Reverse recovery time (trr) is 34 ns. The switching energy is 1.16 mJ for turn-on and 280 µJ for turn-off, measured under test conditions of 400 V, 40 A, 6 Ohm, and 15 V. This device is housed in a TO-247-3 package, suitable for through-hole mounting, and operates across an extended temperature range of -55°C to 175°C (TJ). The FGH40T65SPD-F155 is commonly utilized in industrial power supplies, motor control, and renewable energy systems. It is supplied in tubes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 34 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 16ns/37ns |
| Switching Energy | 1.16mJ (on), 280µJ (off) |
| Test Condition | 400V, 40A, 6Ohm, 15V |
| Gate Charge | 35 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 267 W |
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