FGH40T65SH-F155
IGBT 650V 80A 268W TO-247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH40T65SH-F155 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 80 A, with a pulsed current capability of 120 A. Its low on-state voltage of 2.1 V at 15 V gate-source voltage and 40 A collector current, combined with a maximum power dissipation of 268 W, ensures efficient operation. The device exhibits typical switching times of 19.2 ns turn-on and 65.6 ns turn-off at 25°C, with switching energy values of 1.01 mJ (on) and 297 µJ (off). Packaged in a TO-247-3 through-hole configuration, this IGBT is suitable for demanding power conversion systems, including industrial motor drives, uninterruptible power supplies (UPS), and solar inverters. The operating temperature range is from -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 19.2ns/65.6ns |
| Switching Energy | 1.01mJ (on), 297µJ (off) |
| Test Condition | 400V, 40A, 6Ohm, 15V |
| Gate Charge | 72.2 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 268 W |
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