FGH40T100SMD
IGBT 1000V 80A 333W TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH40T100SMD is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This device features a maximum collector emitter voltage of 1000 V and a continuous collector current of 80 A, with a pulsed collector current capability of 120 A. The IGBT type is Trench Field Stop, offering optimized switching characteristics. With a maximum power dissipation of 333 W and a collector emitter saturation voltage (Vce(on)) of 2.3V at 15V gate-emitter voltage and 40A collector current, it delivers efficient power handling. Gate charge is specified at 265 nC. The device is housed in a TO-247-3 package, suitable for through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in industrial motor drives, power supplies, and uninterruptible power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 78 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 29ns/285ns |
| Switching Energy | 2.35mJ (on), 1.15mJ (off) |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Gate Charge | 265 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 333 W |
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