FGH40N6S2D
IGBT 600V 75A 290W TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH40N6S2D is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This discrete semiconductor component offers a robust 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of 180A. Featuring a low saturation voltage of 2.7V at 15V gate-emitter voltage and 20A collector current, it minimizes conduction losses for improved efficiency. The device exhibits excellent switching characteristics with typical turn-on delay (Td(on)) of 8ns and turn-off delay (Td(off)) of 35ns at 25°C, accompanied by switching energies of 115µJ (on) and 195µJ (off) under specified test conditions. With a maximum power dissipation of 290W and an operating temperature range of -55°C to 150°C, the FGH40N6S2D is suitable for use in industrial motor drives, power supplies, and lighting applications. Supplied in a TO-247-3 package for through-hole mounting, this component is provided in tube packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 48 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 8ns/35ns |
| Switching Energy | 115µJ (on), 195µJ (off) |
| Test Condition | 390V, 20A, 3Ohm, 15V |
| Gate Charge | 35 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 290 W |
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