FGH40N6S2
IGBT 600V 75A 290W TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH40N6S2 is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current capability of 75A, with a pulsed current rating of 180A. The FGH40N6S2 features a maximum power dissipation of 290W and a low on-state voltage of 2.7V at 15V gate-emitter voltage and 20A collector current, verified under specific test conditions (390V, 20A, 3 Ohm, 15V). Key switching characteristics include a gate charge of 35nC and typical turn-on delay of 8ns and turn-off delay of 35ns at 25°C. Switching energy is specified at 115µJ (on) and 195µJ (off). Packaged in a TO-247-3 for through-hole mounting, this device operates across a wide temperature range from -55°C to 150°C. It finds application in industrial power supplies, motor control, and welding equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 8ns/35ns |
| Switching Energy | 115µJ (on), 195µJ (off) |
| Test Condition | 390V, 20A, 3Ohm, 15V |
| Gate Charge | 35 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 290 W |
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