FGH40N65UFDTU
IGBT FIELD STOP 650V 80A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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onsemi FGH40N65UFDTU is a 650V, 80A Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This TO-247-3 packaged device offers a maximum collector power dissipation of 290W and a continuous collector current of 80A, with a pulsed current capability of 120A. Key performance characteristics include a low on-state voltage (Vce(on)) of 2.4V at 15V gate-emitter voltage and 40A collector current, and a gate charge of 120 nC. Switching performance is defined by a turn-on delay (Td(on)) of 24ns and a turn-off delay (Td(off)) of 112ns at 25°C, with a reverse recovery time (trr) of 45ns. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for use in power factor correction, uninterruptible power supplies (UPS), and induction heating applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 45 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 24ns/112ns |
| Switching Energy | 1.19mJ (on), 460µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 290 W |
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