FGH40N60SMDF
IGBT FIELD STOP 600V 80A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH40N60SMDF is a Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 80 A, with a pulsed capability of 120 A. The IGBT Type is Field Stop, offering optimized performance for switching efficiency. Key parameters include a maximum power dissipation of 349 W and a low on-state voltage drop of 2.5 V at 15 V gate-emitter voltage and 40 A collector current. Switching characteristics are defined by a turn-on delay of 12 ns and a turn-off delay of 92 ns at 25°C, with a reverse recovery time of 90 ns. The gate charge is 119 nC. This component is housed in a TO-247-3 package, suitable for through-hole mounting, and operates across a wide temperature range of -55°C to 175°C. It finds application in industrial power supplies, motor drives, and uninterruptible power supplies (UPS).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 90 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 12ns/92ns |
| Switching Energy | 1.3mJ (on), 260µJ (off) |
| Test Condition | 400V, 40A, 6Ohm, 15V |
| Gate Charge | 119 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 349 W |
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