FGH30T65UPDT-F155
IGBT 650V 60A 250W TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH30T65UPDT-F155 is a 650V, 60A Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247-3 package. This device offers a maximum power dissipation of 250W and a collector current of 60A, with a pulsed collector current capability of 90A. Key performance parameters include a Vce(on) of 2.3V at 15V gate-emitter voltage and 30A collector current, a gate charge of 155 nC, and switching energies of 760µJ (on) and 400µJ (off) under test conditions of 400V, 30A, 8O, and 15V. The operating temperature range is -55°C to 175°C (TJ). This IGBT is suitable for applications in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 43 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 22ns/139ns |
| Switching Energy | 760µJ (on), 400µJ (off) |
| Test Condition | 400V, 30A, 8Ohm, 15V |
| Gate Charge | 155 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 250 W |
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