FGH30S150P
IGBT 1500V 60A TO-247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH30S150P is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device features a 1500V collector-emitter breakdown voltage and a continuous collector current rating of 60A, with a pulsed capability of 90A. It exhibits a low on-state voltage (Vce(on)) of 2.4V at 15V gate-emitter voltage and 30A collector current, contributing to efficient power conversion.
With a maximum power dissipation of 500W, the FGH30S150P is suitable for high-power switching applications. Its switching characteristics include a gate charge of 369nC and switching energies of 1.16mJ (on) and 900µJ (off) at a test condition of 600V, 30A, 10 Ohm, and 15V. The device operates across a wide temperature range from -55°C to 175°C (TJ) and is housed in a standard TO-247-3 package for through-hole mounting. This component is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 32ns/492ns |
| Switching Energy | 1.16mJ (on), 900µJ (off) |
| Test Condition | 600V, 30A, 10Ohm, 15V |
| Gate Charge | 369 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1500 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 500 W |
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