FGH30S130P
IGBT 1300V 60A 500W TO-247ABManufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH30S130P is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-power applications. This component features a robust 1300 V collector-emitter breakdown voltage and a continuous 60 A collector current, with a pulsed capability of up to 90 A. The IGBT Type is Trench Field Stop, offering efficient switching characteristics. With a maximum power dissipation of 500 W and a low Vce(on) of 2.3V at 15V Gate-Emitter voltage and 30A collector current, it ensures minimal power loss. The device is housed in a TO-247-3 package, suitable for through-hole mounting and operating across a wide temperature range of -55°C to 175°C. This IGBT is commonly utilized in industrial motor drives, power factor correction, and uninterruptible power supplies (UPS).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 78 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1300 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 500 W |
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