FGH30N60LSDTU
IGBT 600V 60A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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onsemi FGH30N60LSDTU is a 600V, 60A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device features a maximum collector current of 60A, with a pulsed capability of 90A, and a maximum power dissipation of 480W. The Vce(on) is specified at 1.4V at 15V Vge and 30A Ic. Key switching characteristics include a gate charge of 225 nC, a typical turn-on delay of 18ns and turn-off delay of 250ns at 25°C. The reverse recovery time (trr) is 35 ns. The FGH30N60LSDTU is housed in a TO-247-3 package for through-hole mounting, operating across a temperature range of -55°C to 150°C (TJ). This component is suitable for use in industrial applications such as motor drives and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 35 ns |
| Vce(on) (Max) @ Vge, Ic | 1.4V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 18ns/250ns |
| Switching Energy | 1.1mJ (on), 21mJ (off) |
| Test Condition | 400V, 30A, 6.8Ohm, 15V |
| Gate Charge | 225 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 480 W |
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