FGH25N120FTDS
IGBT 1200V 50A 313W TO247Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH25N120FTDS is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage power switching applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 50 A, with a pulsed capability of 75 A. It dissipates a maximum power of 313 W. Key performance characteristics include a low on-state voltage of 2 V at 15 V gate-emitter voltage and 25 A collector current, and switching times of 26 ns turn-on and 151 ns turn-off at 25°C. The device offers a gate charge of 169 nC and a reverse recovery time of 535 ns, with switching energies of 1.42 mJ (on) and 1.16 mJ (off) under specified test conditions. Manufactured by onsemi, this Through Hole device is housed in a TO-247-3 package, suitable for demanding applications in industrial motor drives, power supplies, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 535 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 25A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 26ns/151ns |
| Switching Energy | 1.42mJ (on), 1.16mJ (off) |
| Test Condition | 600V, 25A, 10Ohm, 15V |
| Gate Charge | 169 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 75 A |
| Power - Max | 313 W |
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