FGH20N60UFDTU
IGBT FIELD STOP 600V 40A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGH20N60UFDTU is a Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a 600V collector-emitter breakdown voltage and a maximum continuous collector current of 40A, with a pulsed current capability of 60A. The Vce(on) is rated at 2.4V maximum at 15V gate-emitter voltage and 20A collector current. With a maximum power dissipation of 165W and a low switching energy of 380µJ (on) and 260µJ (off) at 400V, 20A, the FGH20N60UFDTU offers efficient performance. Typical turn-on delay time is 13ns and turn-off delay time is 87ns at 25°C. This device is presented in a TO-247-3 package for through-hole mounting and operates within a temperature range of -55°C to 150°C. Gate charge is specified at 63 nC and reverse recovery time is 34 ns. This IGBT is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 34 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 20A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 13ns/87ns |
| Switching Energy | 380µJ (on), 260µJ (off) |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Gate Charge | 63 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 165 W |