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FGH20N60SFDTU

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FGH20N60SFDTU

IGBT FIELD STOP 600V 40A TO247-3

Manufacturer: onsemi

Categories: Single IGBTs

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The onsemi FGH20N60SFDTU is a Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 40A, with a pulsed capability of 60A. The FGH20N60SFDTU offers a maximum power dissipation of 165W and a low on-state voltage (Vce(on)) of 2.8V at 15V gate-source voltage and 20A collector current. Its gate charge is 65nC, with typical turn-on and turn-off delays of 13ns and 90ns respectively at 25°C. Reverse recovery time (trr) is specified at 34ns, and switching energy is 370µJ (on) and 160µJ (off) under test conditions of 400V, 20A, 10 Ohm, and 15V. This device is housed in a TO-247-3 package for through-hole mounting and operates within a temperature range of -55°C to 150°C (TJ). It finds application in power factor correction, uninterruptible power supplies (UPS), and motor control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)34 ns
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 20A
Supplier Device PackageTO-247-3
IGBT TypeField Stop
Td (on/off) @ 25°C13ns/90ns
Switching Energy370µJ (on), 160µJ (off)
Test Condition400V, 20A, 10Ohm, 15V
Gate Charge65 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)60 A
Power - Max165 W

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