FGH15T120SMD-F155
IGBT TRENCH FS 1200V 30A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
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onsemi's FGH15T120SMD-F155 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 30 A, with a pulsed capability of 60 A. With a maximum power dissipation of 333 W and a low on-state voltage of 2.4V at 15V gate-emitter voltage and 15A collector current, it ensures efficient operation. Key switching parameters include a gate charge of 128 nC and switching energies of 1.15 mJ (on) and 460 µJ (off) under test conditions of 600 V, 15 A, 34 Ohm, and 15 V. The TO-247-3 package facilitates through-hole mounting and operates across a wide temperature range of -55°C to 175°C. This device is commonly utilized in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 72 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 15A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 32ns/490ns |
| Switching Energy | 1.15mJ (on), 460µJ (off) |
| Test Condition | 600V, 15A, 34Ohm, 15V |
| Gate Charge | 128 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 333 W |
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