FGH12040WD-F155
IGBT TRENCH/FS 1200V 80A TO247-3Manufacturer: onsemi
Categories: Single IGBTs
Quality Control: Learn More
The onsemi FGH12040WD-F155 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a collector-emitter voltage (Vce) breakdown of 1200 V and a continuous collector current (Ic) rating of 80 A, with a pulsed collector current (Icm) of 100 A. The device has a maximum power dissipation of 428 W and a low on-state voltage drop (Vce(on)) of 2.9 V at 15 V gate-emitter voltage and 40 A collector current. Key performance parameters include a gate charge of 226 nC and switching energies of 4.1 mJ (on) and 1 mJ (off) under test conditions of 600 V, 40 A, 23 Ohms, and 15 V. The FGH12040WD-F155 is housed in a TO-247-3 package for through-hole mounting and operates across a temperature range of -55°C to 175°C. This IGBT is suitable for use in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 71 ns |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 45ns/560ns |
| Switching Energy | 4.1mJ (on), 1mJ (off) |
| Test Condition | 600V, 40A, 23Ohm, 15V |
| Gate Charge | 226 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 428 W |
Request a Quote
Clients Also Buy
FGY4L160T120SWD
1200V 160A FS7 IGBT TP247-4L
NGTB30N120LWG
IGBT 1200V 30A TO247
FGH75N60UFTU
IGBT 600V 150A 452W TO247
