onsemi FGB5056G2-F085 is a high-voltage, high-efficiency Insulated Gate Bipolar Transistor (IGBT). This component is designed for robust performance in demanding applications. It features a 500 mJ energy rating for the collector-emitter, with a continuous collector current capability of 560 A. The FGB5056G2-F085 is suitable for power switching applications across various industrial sectors, including motor drives, renewable energy systems, and industrial power supplies. Its advanced IGBT technology ensures efficient power conversion and reliable operation in challenging environments. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet: