FGB30N6S2D
IGBT 600V 45A 167W TO263ABManufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGB30N6S2D is a 600V, 45A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device features a 167W maximum power dissipation and a TO-263 (D2PAK) surface mount package, suitable for automated assembly and compact designs. Key electrical characteristics include a collector current of 45A (108A pulsed), a Vce(on) of 2.5V at 15V gate-source voltage and 12A collector current, and a low gate charge of 23 nC. Switching performance is optimized with typical turn-on delay of 6ns and turn-off delay of 40ns at 25°C, and switching energies of 55µJ (on) and 100µJ (off) under specified test conditions (390V, 12A, 10O, 15V). The FGB30N6S2D operates across a wide temperature range of -55°C to 150°C (TJ). This component is commonly utilized in industrial motor control, power supplies, and uninterruptible power systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 46 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 12A |
| Supplier Device Package | TO-263 (D2PAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 6ns/40ns |
| Switching Energy | 55µJ (on), 100µJ (off) |
| Test Condition | 390V, 12A, 10Ohm, 15V |
| Gate Charge | 23 nC |
| Current - Collector (Ic) (Max) | 45 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 108 A |
| Power - Max | 167 W |
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