FGAF40N60UFDTU
IGBT 600V 40A TO3PFManufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGAF40N60UFDTU is a 600V, 40A Insulated Gate Bipolar Transistor (IGBT) housed in a TO-3PF package. This device features a maximum collector current of 40A and a pulsed collector current of 160A, suitable for demanding power switching applications. With a collector-emitter saturation voltage (Vce(on)) of 3V at 15V gate-emitter voltage and 20A collector current, it offers efficient operation. The IGBT exhibits a gate charge of 77 nC and switching times of 15ns turn-on and 65ns turn-off at 25°C, with a reverse recovery time of 95 ns. Its maximum power dissipation is 100W, and it operates across an extended temperature range of -55°C to 150°C. The FGAF40N60UFDTU is commonly employed in industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 95 ns |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 20A |
| Supplier Device Package | TO-3PF |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/65ns |
| Switching Energy | 470µJ (on), 130µJ (off) |
| Test Condition | 300V, 20A, 10Ohm, 15V |
| Gate Charge | 77 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 100 W |
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