FGAF30S65AQ
IGBT 650V 30A TO-3PFManufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGAF30S65AQ is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. This component features a 650V collector-emitter breakdown voltage and a continuous collector current capability of 60A, with a pulsed current rating of 90A. Specified with a maximum power dissipation of 83W, the FGAF30S65AQ offers a low on-state voltage of 2.1V at 15V gate-emitter voltage and 30A collector current. Its switching characteristics include a typical turn-on delay of 18ns and turn-off delay of 92ns at 25°C, with switching energies of 515µJ (on) and 140µJ (off) under test conditions of 400V, 15A, 13O, and 15V. The IGBT operates across a wide temperature range from -55°C to 175°C and is supplied in a TO-3PF-3 package for through-hole mounting. This device is suitable for use in industrial power conversion systems, motor drives, and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 267 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A |
| Supplier Device Package | TO-3PF-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 18ns/92ns |
| Switching Energy | 515µJ (on), 140µJ (off) |
| Test Condition | 400V, 15A, 13Ohm, 15V |
| Gate Charge | 58 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 83 W |
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