FGAF20S65AQ
IGBT 650V 20A TO-3PFManufacturer: onsemi
Categories: Single IGBTs
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onsemi FGAF20S65AQ is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This component offers a 650 V collector-emitter breakdown voltage and a continuous collector current capability of 40 A, with a pulsed capability of up to 60 A. The device features a low on-state voltage (Vce(on)) of 2.1 V at 15 V gate-emitter voltage and 20 A collector current. Key switching characteristics include a turn-on delay of 18 ns and a turn-off delay of 102 ns at 25°C, with switching energies of 345 µJ (on) and 95 µJ (off) under specified test conditions. The FGAF20S65AQ is housed in a TO-3PF-3 package, enabling through-hole mounting. Its robust design with a maximum power dissipation of 75 W and an operating temperature range of -55°C to 175°C makes it suitable for applications in industrial power supplies, motor control, and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 235 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 20A |
| Supplier Device Package | TO-3PF-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 18ns/102ns |
| Switching Energy | 345µJ (on), 95µJ (off) |
| Test Condition | 400V, 10A, 23Ohm, 15V |
| Gate Charge | 38 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 75 W |
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