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FGA70N33BTDTU

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FGA70N33BTDTU

IGBT 330V 149W TO3P

Manufacturer: onsemi

Categories: Single IGBTs

Quality Control: Learn More

onsemi FGA70N33BTDTU is a high-performance Trench IGBT designed for demanding power switching applications. This through-hole component features a 330V collector-emitter breakdown voltage and a continuous collector current rating of 70A, with a pulsed capability of 220A. The device offers a maximum power dissipation of 149W and a low on-state voltage (Vce(on)) of 1.7V at 15V gate-emitter voltage and 70A collector current. With a gate charge of 49nC and a reverse recovery time of 23ns, it is optimized for efficient switching. Operating across a wide temperature range of -55°C to 150°C (TJ), the FGA70N33BTDTU is housed in a TO-3P-3, SC-65-3 package, commonly utilized in industrial motor control, power supplies, and electric vehicle powertrains.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)23 ns
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 70A
Supplier Device PackageTO-3P
IGBT TypeTrench
Td (on/off) @ 25°C-
Switching Energy-
Test Condition-
Gate Charge49 nC
Voltage - Collector Emitter Breakdown (Max)330 V
Current - Collector Pulsed (Icm)220 A
Power - Max149 W

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