FGA6560WDF
IGBT TRENCH/FS 650V 120A TO3PNManufacturer: onsemi
Categories: Single IGBTs
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onsemi FGA6560WDF is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) with a 650 V collector-emitter breakdown voltage. This component offers a continuous collector current capability of 120 A, with a pulsed capability of 180 A. It features low switching energy with 2.46 mJ (on) and 520 µJ (off) at the specified test conditions (400 V, 60 A, 6 O, 15 V). The on-state voltage drop is a maximum of 2.3 V at 15 V gate-emitter voltage and 60 A collector current. The typical turn-on delay is 25.6 ns and turn-off delay is 71 ns. With a maximum power dissipation of 306 W and an operating junction temperature range from -55°C to 175°C, this IGBT is housed in a TO-3PN package, suitable for through-hole mounting. Applications include power supply, motor control, and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 110 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 60A |
| Supplier Device Package | TO-3PN |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 25.6ns/71ns |
| Switching Energy | 2.46mJ (on), 520µJ (off) |
| Test Condition | 400V, 60A, 6Ohm, 15V |
| Gate Charge | 84 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 306 W |
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