FGA6530WDF
IGBT 650V 60A 176W TO3PNManufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGA6530WDF is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component offers a 650 V collector-emitter breakdown voltage and a continuous collector current capability of 60 A, with a pulsed collector current rating of 90 A. Key performance characteristics include a maximum power dissipation of 176 W and a low on-state voltage (Vce(on)) of 2.2 V at 15 V gate-emitter voltage and 30 A collector current. Switching characteristics are defined by a gate charge of 37.4 nC and switching energies of 960 µJ (turn-on) and 162 µJ (turn-off) under specified test conditions. The TO-3PN package facilitates through-hole mounting and is supplied in tubes. This IGBT is suitable for use in power factor correction, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 81 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 30A |
| Supplier Device Package | TO-3PN |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 12ns/42.4ns |
| Switching Energy | 960µJ (on), 162µJ (off) |
| Test Condition | 400V, 30A, 6Ohm, 15V |
| Gate Charge | 37.4 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 176 W |
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