FGA60N60UFDTU
IGBT 600V 120A 298W TO3PManufacturer: onsemi
Categories: Single IGBTs
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onsemi's FGA60N60UFDTU is a 600V, 120A Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device offers a maximum collector power dissipation of 298W and features a low on-state voltage of 2.4V at 15V gate-emitter voltage and 60A collector current. The FGA60N60UFDTU exhibits a typical gate charge of 188 nC and switching times of 23ns turn-on and 130ns turn-off at 25°C, with switching energy figures of 1.81mJ (on) and 810µJ (off) under test conditions of 400V, 60A, 5 Ohm, and 15V. With a maximum operating temperature of 150°C, this IGBT is suitable for industrial and motor drive applications. It is supplied in a TO-3PN package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 47 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 60A |
| Supplier Device Package | TO-3PN |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 23ns/130ns |
| Switching Energy | 1.81mJ (on), 810µJ (off) |
| Test Condition | 400V, 60A, 5Ohm, 15V |
| Gate Charge | 188 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 298 W |
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