FGA50T65SHD
IGBT TRENCH/FS 650V 100A TO3PNManufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGA50T65SHD is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. This device features a 650 V collector-emitter breakdown voltage and a continuous collector current of 100 A, with a pulsed capability of 150 A. With a maximum power dissipation of 319 W and a low on-state voltage of 2.1 V at 15 V gate-emitter voltage and 50 A collector current, it offers efficient switching. The FGA50T65SHD exhibits a typical gate charge of 87 nC and switching energy of 1.28 mJ (turn-on) and 384 µJ (turn-off) under the test condition of 400 V, 50 A, 6 Ohm, and 15 V. It is packaged in a TO-3PN (TO-3P-3, SC-65-3) through-hole configuration, allowing operation across an extended temperature range of -55°C to 175°C. This component is suitable for use in demanding power electronics systems, including industrial motor drives and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 34.6 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Supplier Device Package | TO-3PN |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 22.4ns/73.6ns |
| Switching Energy | 1.28mJ (on), 384µJ (off) |
| Test Condition | 400V, 50A, 6Ohm, 15V |
| Gate Charge | 87 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 319 W |
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