FGA50N60LS
IGBT 600V 100A 240W TO3PManufacturer: onsemi
Categories: Single IGBTs
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onsemi FGA50N60LS is a 600V, 100A Insulated Gate Bipolar Transistor (IGBT) housed in a TO-3P package. This device offers a maximum continuous collector current of 100A and a pulsed collector current of 150A. The on-state voltage (Vce(on)) is 1.8V at 15V gate-emitter voltage and 50A collector current, with a typical gate charge of 167 nC. Switching characteristics include a turn-on delay (Td(on)) of 54ns and a turn-off delay (Td(off)) of 146ns at 25°C, with switching energy of 1.1mJ (on) and 3.2mJ (off) under specified test conditions (300V, 50A, 5.9 Ohm, 15V). The maximum power dissipation is 240W, and it operates across a temperature range of -55°C to 150°C. This component is suitable for applications in industrial motor drives and power factor correction.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 50A |
| Supplier Device Package | TO-3P |
| IGBT Type | - |
| Td (on/off) @ 25°C | 54ns/146ns |
| Switching Energy | 1.1mJ (on), 3.2mJ (off) |
| Test Condition | 300V, 50A, 5.9Ohm, 15V |
| Gate Charge | 167 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 240 W |
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