FGA50N100BNTDTU
IGBT 1000V 50A 156W TO3PManufacturer: onsemi
Categories: Single IGBTs
Quality Control: Learn More
The onsemi FGA50N100BNTDTU is a high-performance NPT and Trench IGBT designed for demanding applications. This component features a 1000 V collector-emitter breakdown voltage and a continuous collector current of 50 A, with a pulsed capability of up to 100 A. It dissipates a maximum power of 156 W and exhibits a Vce(on) of 2.9V at 15V Vge and 60A Ic. The gate charge is specified at 275 nC, and the reverse recovery time (trr) is 1.5 µs. Packaged in a TO-3P-3, SC-65-3 (TO-3P) through-hole package, this device operates reliably across a wide temperature range of -55°C to 150°C (TJ). The FGA50N100BNTDTU is commonly utilized in industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 1.5 µs |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
| Supplier Device Package | TO-3P |
| IGBT Type | NPT and Trench |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 275 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 156 W |