FGA50N100BNTD2
IGBT 1000V 50A 156W TO3PManufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGA50N100BNTD2 is a high-performance NPT and Trench Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This through-hole component features a 1000 V collector-emitter breakdown voltage and a continuous collector current rating of 50 A, with a pulsed capability of 200 A. With a maximum power dissipation of 156 W and a low on-state voltage (Vce(on)) of 2.9V at 15V gate-emitter voltage and 60A collector current, it offers efficient power switching. The gate charge is specified at 257 nC, and typical turn-on and turn-off delays at 25°C are 34 ns and 243 ns, respectively. The reverse recovery time (trr) is 75 ns. Packaged in a TO-3P, this device is suitable for use in industrial motor drives, uninterruptible power supplies, and welding equipment. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 75 ns |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
| Supplier Device Package | TO-3P |
| IGBT Type | NPT and Trench |
| Td (on/off) @ 25°C | 34ns/243ns |
| Switching Energy | - |
| Test Condition | 600V, 60A, 10Ohm, 15V |
| Gate Charge | 257 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 156 W |
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