FGA40T65SHDF
IGBT TRENCH/FS 650V 80A TO3PNManufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGA40T65SHDF is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) engineered for robust performance. This component offers a collector-emitter breakdown voltage of 650 V and a continuous collector current rating of 80 A, with a pulsed capability of 120 A. It features a low on-state voltage (Vce(on)) of 1.81 V at 15 V gate-emitter voltage and 40 A collector current. The device exhibits a gate charge of 68 nC and switching energies of 1.22 mJ (turn-on) and 440 µJ (turn-off) under test conditions of 400 V, 40 A, 6 Ohm, and 15 V. With a maximum power dissipation of 268 W and an operating junction temperature range of -55°C to 175°C, the FGA40T65SHDF is supplied in a TO-3PN package suitable for through-hole mounting. This device is utilized in industrial applications such as power supplies, motor control, and welding equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 101 ns |
| Vce(on) (Max) @ Vge, Ic | 1.81V @ 15V, 40A |
| Supplier Device Package | TO-3PN |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 18ns/64ns |
| Switching Energy | 1.22mJ (on), 440µJ (off) |
| Test Condition | 400V, 40A, 6Ohm, 15V |
| Gate Charge | 68 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 268 W |
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