FGA30T65SHD
IGBT TRENCH/FS 650V 60A TO3PNManufacturer: onsemi
Categories: Single IGBTs
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onsemi FGA30T65SHD, a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT), offers a 650V collector-emitter breakdown voltage. This device features a continuous collector current rating of 60A (90A pulsed) and a maximum power dissipation of 238W. The FGA30T65SHD exhibits a low on-state voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 30A collector current. Switching characteristics include a turn-on delay of 14.4ns and turn-off delay of 52.8ns at 25°C, with a reverse recovery time (trr) of 31.8ns. The gate charge is specified at 54.7 nC. Packaged in a TO-3PN (TO-3P-3) through-hole configuration, this component is suitable for applications in industrial motor drives and power supplies. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 31.8 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A |
| Supplier Device Package | TO-3PN |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 14.4ns/52.8ns |
| Switching Energy | 598µJ (on), 167µJ (off) |
| Test Condition | 400V, 30A, 6Ohm, 15V |
| Gate Charge | 54.7 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 238 W |
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