FGA30N120FTDTU
IGBT 1200V 60A 339W TO3PManufacturer: onsemi
Categories: Single IGBTs
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onsemi FGA30N120FTDTU is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This component features a collector-emitter voltage (Vce) of 1200 V and a continuous collector current (Ic) of 60 A, with a pulsed current (Icm) capability of 90 A. The IGBT Type is Trench Field Stop, offering efficient switching characteristics. It has a maximum power dissipation of 339 W and a low on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 30A collector current. The gate charge is 208 nC, and the reverse recovery time (trr) is 730 ns. The FGA30N120FTDTU is housed in a TO-3PN package, suitable for through-hole mounting. This device is utilized in demanding applications across industries such as industrial motor control, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 730 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
| Supplier Device Package | TO-3PN |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 208 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 339 W |
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