FGA3060ADF
IGBT TRENCH/FS 600V 60A TO3PNManufacturer: onsemi
Categories: Single IGBTs
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The onsemi FGA3060ADF is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 60A, with a pulsed capability up to 90A. It offers a maximum power dissipation of 176W and an on-state voltage (Vce(on)) of 2.3V at 15V gate-emitter voltage and 30A collector current. The device exhibits a gate charge of 37.4 nC and switching energies of 960µJ (turn-on) and 165µJ (turn-off) under specified test conditions (400V, 30A, 6O, 15V). The TO-3PN package with through-hole mounting is suitable for demanding thermal management. Operating temperature ranges from -55°C to 175°C (TJ). This IGBT is frequently utilized in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 26 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 30A |
| Supplier Device Package | TO-3PN |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 12ns/42.4ns |
| Switching Energy | 960µJ (on), 165µJ (off) |
| Test Condition | 400V, 30A, 6Ohm, 15V |
| Gate Charge | 37.4 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 176 W |
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